K4H511638B-TC/LB3

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H511638B-TC/LB3
Brand SAMSUNG
Item DDR1 SDRAM
Part No 32MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS Leaded
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 166 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H511638G-LCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638G-LCCC/B3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638J-LCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638J-LCB3000 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638J-LCB3T TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638J-LCB3T00 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638J-LLB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
K4H511638N-LCB3 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
MT46V32M16A2P-6 TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C
MT46V32M16A2P-6T TSOP2(66) 2.5 V 166 MHZ 0 C~+85 C