K4H511638DUCC

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4H511638DUCC
Brand SAMSUNG
Item DDR1 SDRAM
Part No 32MX16 DDR1

Product Details

Package TSOP2(66)
Outpack
RoHS RoHS
Voltage 2.5 V
Temperature 0 C~+85 C
Speed 200 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 5th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4H511638DUCC 15,000 09+ Get Quote
K4H511638DUCC 1,530 2007+ Get Quote
K4H511638DUCC 8,564 Get Quote
K4H511638DUCC 13,500 Get Quote
K4H511638DUCC 20,160 08+ Get Quote
K4H511638DUCC 20,000 2007+ Get Quote
K4H511638DUCC 9,600 Get Quote
K4H511638DUCC 3,840 07+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4H511638B-TLCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638B-UC/LCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638B-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638B-ULCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UC/LCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UCCC TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UCCC0 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C
K4H511638C-UCCC000 TSOP2(66) 2.5 V 200 MHZ 0 C~+85 C