K4M28323PH-HN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4M28323PH-HN75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 4MX32 SD

Product Details

Package FBGA-90
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x32
Density 128M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 9th Generation

Available Offers

Description Qty Datecode
K4M28323PH-HN75 4,000 Get Quote
K4M28323PH-HN75 3,360 2010 Get Quote
K4M28323PH-HN75 3,360 07+ Get Quote
K4M28323PH-HN75 3,360 200746+ Get Quote
K4M28323PH-HN75 3,360 2007 Get Quote
K4M28323PH-HN75 3,360 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4M28323PH-BG75 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-FG75 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-HG75 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-HG750 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-HG75000 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-HG750JR FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PH-HG90 FBGA-90 1.8 V 133 MHZ -25 C~+85 C
K4M28323PHFG90 FBGA-90 1.8 V 133 MHZ -25 C~+85 C