K4S281633A-BN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S281633A-BN75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 8MX16 SD

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x16
Density 128M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 2nd Generation

Available Offers

Description Qty Datecode
K4S281633A-BN75 1,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S281633FBN75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S281633HBN75 FBGA 3.3 V 133 MHZ -25 C~+85 C