K4S283233F-HL75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S283233F-HL75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 4MX32 SD

Product Details

Package FBGA-90
Outpack
RoHS Leaded
Voltage 3.0V/3.3V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x32
Density 128M
Internal Banks 4 Banks
Power Low Power
Generation 7th Generation

Available Offers

Description Qty Datecode
K4S283233F-HL75 1,924 2007+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4M283232H-HN75 FBGA-90 3.3 V 133 MHZ -25 C~+85 C
K4M283233H-FG75 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FG7L FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FN75 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FN750 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FN75000 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FN75T FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-FN75T00 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-HE75 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C
K4M283233H-HG75 FBGA-90 3.0V/3.3V 133 MHZ -25 C~+85 C