K4S511632B-TL75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S511632B-TL75
Brand SAMSUNG
Item SDRAM
Part No 32MX16 SD
Alternate Names K4S511632B-TL75T00

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Low Power

Available Offers

Description Qty Datecode
K4S511632B-TL75 4,000 Get Quote
K4S511632B-TL75 2,000 2007+ Get Quote
K4S511632B-TL75 2,880 2003+ Get Quote
K4S511632B-TL75T00 1,120 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S511632B-UC75000 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632B-UC75000LF TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632B-UC75T TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632B-UC75T00 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632B-UL75000 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632B/D-UC75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632BTC75ORUC75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632BUC75000LEADFREE TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632BUC75PBFREE TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
K4S511632BUCTC75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C