K4S511632M-TL75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S511632M-TL75
Brand SAMSUNG
Item SDRAM
Part No 32MX16 SD
Alternate Names K4S511632M-TL75T
K4S511632MTL7500

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 1st Generation
Power Low Power

Available Offers

Description Qty Datecode
K4S511632M-TL75 2,000 2008+ Get Quote
K4S511632M-TL75 12,000 2008+ Get Quote
K4S511632M-TL75 2,093 2007+ Get Quote
K4S511632M-TL75 400 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EDS51165ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS51165ABTA-75 ELPIDA TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75-A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA7A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ADTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116AKTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116AKTA-75-E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C