K4S563233F-HN1H

Product Overview

IC Picture

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Manufacturer Part No K4S563233F-HN1H
Brand SAMSUNG
Item SDRAM
Part No 8MX32 SD

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 100 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x32
Density 256M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 7th Generation

Available Offers

Description Qty Datecode
K4S563233F-HN1H 4,000 Get Quote
K4S563233F-HN1H 2,541 2007+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S563233F-FE1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S563233F-FG1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S563233F-FN1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S563233F-HE1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S563233F-HG1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S563233FEN1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S56323LF-FE1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S56323LF-FN1H FBGA 3.3 V 100 MHZ -25 C~+85 C
K4S56323LF-HE1H FBGA 3.3 V 100 MHZ -25 C~+85 C