K4S641632E-TC10

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S641632E-TC10
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD

Product Details

Package TSOP2(54)
Outpack TRAY
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 100 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Power Normal Power
Generation 6th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IC42S16400-10T TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
IS42S16400-10T TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
IS42S16400-10TT TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
IS42S16400-10TX TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
IS42S16400-7/5/10T TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
IS42S16400A-10TL TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
K 4S641632DTC1L TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
K4S6416320-IC1H TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
K4S6416320-TC1H TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C
K4S6416320-TC1L TSOP2(54) 3.3 V 100 MHZ 0 C~+85 C