K4S641632E-TL1L

Product Overview

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Manufacturer Part No K4S641632E-TL1L
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD
Alternate Names K4S641632E-TL1L00
K4S641632E-TL1L000
K4S641632E-TL1L0000
K4S641632E-TL1LT

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+70 C
Speed 100 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Power Low Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4S641632E-TL1L 6,500 Get Quote
K4S641632E-TL1L 2,000 2008+ Get Quote
K4S641632E-TL1L 7,000 2009+ Get Quote
K4S641632E-TL1L 2,547 2007+ Get Quote
K4S641632E-TL1L 4,563 Get Quote
K4S641632E-TL1L 7,000 Get Quote
K4S641632E-TL1L 12,000 Get Quote
K4S641632E-TL1L 10,000 Get Quote
K4S641632E-TL1L 18,000 2003+ Get Quote
K4S641632E-TL1L 20,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S641632-TL1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632-TL1LT TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632B-TL1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632D-TL1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632D-TL1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632ETI1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C
K4S641632F-TL1L TSOP2(54) 3.3 V 100 MHZ -25 C~+70 C