K4S641632E-TP1H

Product Overview

IC Picture

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Manufacturer Part No K4S641632E-TP1H
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 100 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Power Low Power
Generation 6th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
HY57V651620BLTC-10SI TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
HY57V651620BLTC10PI TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
HY57V651620BTC-10I TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
HY57V651620BTC-10IT TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
HY57V651620BTC-10SI TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
IC42S16400-10TI TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
IS42S16400-10TI TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
IS42S16400-10TIX TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
IS45S16400A-10TLA1 TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C
K4S641632D-TI1L000 TSOP2(54) 3.3 V 100 MHZ -40 C~+85 C