K4S641632ETL55

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S641632ETL55
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 183 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Power Low Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4S641632ETL55 2,000 2008+ Get Quote
K4S641632ETL55 7,000 2009+ Get Quote
K4S641632ETL55 12,000 2008+ Get Quote
K4S641632ETL55 2,547 2007+ Get Quote
K4S641632ETL55 6,000 Get Quote
K4S641632ETL55 7,000 Get Quote
K4S641632ETL55 12,000 Get Quote
K4S641632ETL55 10,000 Get Quote
K4S641632ETL55 5,000 2004+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S641632D-TC55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632D-TC55 SAMSU TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632D-TL55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632D-UC55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632D-UL55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632D/F-TC/L60 OR 55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632E-QC55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632E-TC55 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632E-TC55 SAMSU TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C
K4S641632E-TC5558566 TSOP2(54) 3.3 V 183 MHZ 0 C~+85 C