K4S641632F-TH75

Product Overview

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Manufacturer Part No K4S641632F-TH75
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Power Low, i-TCSR & PASR & DS
Generation 7th Generation

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
( K4S641632N-LI75) TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS6416AHTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS6416AJTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632DTI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI/P75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75T00 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632ETI-75000 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C