K4S641632GTI75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S641632GTI75
Brand SAMSUNG
Item SDRAM
Part No 4MX16 SD

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Internal Banks 4 Banks
Generation 8th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4S641632GTI75 6,500 Get Quote
K4S641632GTI75 1,440 9 Get Quote
K4S641632GTI75 4,440 Get Quote
K4S641632GTI75 1,440 2009+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
( K4S641632N-LI75) TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632C-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632C-TP1L0 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632C-TP1L00 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632C-TP1L000 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632DTI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI/P75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI1L000 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
K4S641632E-TI75 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C