Images are for reference only
| Manufacturer Part No | K4S641633D-GN96 |
| Brand | SAMSUNG |
| Item | SDRAM MOBILE |
| Part No | 4MX16 SD |
| Alternate Names | K4S641633D-GN96000 |
| K4S641633D-GN96T | |
| K4S641633D-GN96T00 |
| Package | CSP-52 |
| Outpack | |
| RoHS | Leaded |
| Voltage | 3.0V/3.3V |
| Temperature | -25 C~+85 C |
| Speed | 166 MHZ |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 5th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4S641633D-GN96 | 1,000 | 0118+ | Get Quote |
| K4S641633D-GN96 | 5,500 | Get Quote | |
| K4S641633D-GN96 | 1,000 | Get Quote | |
| K4S641633D-GN96 | 12,000 | Get Quote | |
| K4S641633D-GN96 | 1,507 | 04+ | Get Quote |
| K4S641633D-GN96 | 1,507 | Get Quote | |
| K4S641633D-GN96 | 5,000 | 2004+ | Get Quote |
| K4S641633D-GN96 | 1,507 | 2003+ | Get Quote |
| K4S641633D-GN96T00 | 2,000 | Get Quote | |
| K4S641633D-GN96T | 2,000 | 2004+ | Get Quote |