Package | TSOP2(86) |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 166 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
IS42S32200LTSOP2(86) | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S64323232H-UC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S6432324UC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232ATUC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC60 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC60(01 ) | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC60/70 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC600 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
K4S643232C-TC6000 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |