K4S643232H-HC75

Product Overview

IC Picture

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Manufacturer Part No K4S643232H-HC75
Brand SAMSUNG
Item SDRAM
Part No 2MX32 SD

Product Details

Package TSOP2(86)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S643232C-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232C-TC750000 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232CTC75T TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232D-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232D-TL75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC750000 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232E-TC75T00 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232F-TC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C
K4S643232F-UC75 TSOP2(86) 3.3 V 133 MHZ 0 C~+85 C