Package | TSOP2(86) |
Outpack | |
RoHS | Leaded |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 143 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4S643232C-PC70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC/L70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70/E-TC7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC700 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC7000 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70000 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70000(L/ | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
K4S643232C-TC70T(L/T2 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |