Package | TSOP2(86) |
Outpack | TRAY |
RoHS | Leaded |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 200 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S643232H-TC50 | 563 | 04+ | Get Quote |
K4S643232H-TC50 | 4,000 | Get Quote | |
K4S643232H-TC50 | 114 | 05+ | Get Quote |
K4S643232H-TC50 | 7,000 | 2009+ | Get Quote |
K4S643232H-TC50 | 9,500 | 2008+ | Get Quote |
K4S643232H-TC50 | 2,548 | 2007+ | Get Quote |
K4S643232H-TC50 | 6,755 | Get Quote | |
K4S643232H-TC50 | 7,000 | Get Quote | |
K4S643232H-TC50 | 700 | 2005+ | Get Quote |
K4S643232H-TC50 | 134 | 05+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4S643232H-UC50 | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232H-UC50000 | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232H-UC500F0 | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232H-UL50 | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232HTC55/50/60 | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232HTC5O | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232HTC5TC | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |
K4S643232T-TC50T | TSOP2(86) | 3.3 V | 200 MHZ | 0 C~+85 C |