Package | TSOP2(86) |
Outpack | |
RoHS | Leaded |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 133 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S643232H-TC75 | 676 | Get Quote | |
K4S643232H-TC75 | 676 | 04+ | Get Quote |
K4S643232H-TC75 | 6,000 | Get Quote | |
K4S643232H-TC75 | 2,500 | 2005 | Get Quote |
K4S643232H-TC75 | 10,000 | Get Quote | |
K4S643232H-TC75 | 0 | Get Quote | |
K4S643232H-TC75 | 50,000 | Get Quote | |
K4S643232H-TC75 | 20,000 | 2004+ | Get Quote |
K4S643232H-TC75 | 5,000 | 2004+ | Get Quote |
K4S643232H-TC75 | 6,300 | 2002+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4S643232C-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232C-TC750000 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232CTC75T | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232D-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232D-TL75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC750000 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232E-TC75T00 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232F-TC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |
K4S643232F-UC75 | TSOP2(86) | 3.3 V | 133 MHZ | 0 C~+85 C |