Package | TSOP2(86) |
Outpack | TRAY |
RoHS | Leaded |
Voltage | 3.3 V |
Temperature | -40 C~+85 C |
Speed | 166 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Low Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S643232H-TP60 | 10,000 | 2009+ | Get Quote |
K4S643232H-TP60 | 10,000 | Get Quote | |
K4S643232H-TP60 | 10,000 | Get Quote | |
K4S643232H-TP60 | 12,000 | Get Quote | |
K4S643232H-TP60 | 960 | Get Quote | |
K4S643232H-TP60 | 8,640 | 2005+ | Get Quote |
K4S643232H-TP60 | 6,720 | Get Quote | |
K4S643232H-TP60 | 23,860 | 200413+ | Get Quote |
K4S643232H-TP60 | 24,000 | Get Quote | |
K4S643232H-TP60 | 24,260 | 200413+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
AS4C2M32S-6TIN | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
AS4C2M32SA-6TIN | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
AS4C2M32SA-6TINTR | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
EM638325TS-6IG | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220CLT-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220CT-6HYNI | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220CT-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220CT60I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220DLTP-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |
HY57V643220DTP-6I | TSOP2(86) | 3.3 V | 166 MHZ | -40 C~+85 C |