K4S643232HTC60TSOPII
Product Details
| Package | TSOP2(86) |
| Outpack | |
| RoHS | Leaded |
| Voltage | 3.3 V |
| Temperature | 0 C~+85 C |
| Speed | 166 MHZ |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Generation | 9th Generation |
| Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| IC42S32200-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6T 3.3V | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6T-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200-6TG | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IC42S32200B6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-60T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-60TI | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
| IS42S32200-6TL | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
Due to technical reasons, data is incomplete. Please try again later
(503)