K4S643232HUCL70

Product Overview

IC Picture

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Manufacturer Part No K4S643232HUCL70
Brand SAMSUNG
Item SDRAM
Part No 2MX32 SD

Product Details

Package TSOP2(86)
Outpack TRAY
RoHS RoHS
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 143 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 2M
Bit Organization x32
Density 64M
Internal Banks 4 Banks
Generation 9th Generation
Power Normal Power

GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IC42S32200-6T/7T TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S32200-7T TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S32200-7TC6 TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S32200/L-7T TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S322007TG TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S32200L-7TG TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IC42S32202-7T TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IS42S32200-7 TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IS42S32200-70T TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C
IS42S32200-70TI TSOP2(86) 3.3 V 143 MHZ 0 C~+85 C