Images are for reference only
| Manufacturer Part No | K4T1G163QFBCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 64MX16 DDR2 |
| Package | FBGA |
| Outpack | |
| RoHS | Leaded |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 7th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T1G163QFBCE6 | 5,500 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| IS43DR16640D-3DB | FBGA | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G163QCZCE6 | FBGA | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G163QE-BCE6 | FBGA | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1GF164QE-HCE6000 | FBGA | 1.8 V | 667 MBPS | 0 C~+85 C |