K4T1G164QE/QQ-HCE6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4T1G164QE/QQ-HCE6
Brand SAMSUNG
Item DDR2 SDRAM
Part No 64MX16 DDR2
Alternate Names K4T1G164QE/QQ-HCE6T

Product Details

Package FBGA-84
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 667 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 64M
Bit Organization x16
Density 1G
Internal Banks 8 Banks
Generation 6th Generation

Available Offers

Description Qty Datecode
K4T1G164QE/QQ-HCE6 10,000 2010 Get Quote
K4T1G164QE/QQ-HCE6 10,000 Get Quote
K4T1G164QE/QQ-HCE6 0 Get Quote
K4T1G164QE/QQ-HCE6T 30,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EM68C16CWQD-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68C16CWVB-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2C-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160CF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC 1G160BF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G1602F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G160C2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C