Images are for reference only
| Manufacturer Part No | K4T511630HCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 32MX16 DDR2 |
| Package | FBGA-84 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | -25 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal |
| Generation | 9th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T511630HCE6 | 4,000 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| K4T51163EZCE6 | FBGA-84 | 1.8 V | 667 MBPS | -25 C~+85 C |