Images are for reference only
Manufacturer Part No | K4T51163KUG-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Power | Low, i-TCSR & PASR & DS |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
HYB18T512160BF3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160BF3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TCL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160TFL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512161BF-33 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512161BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC512160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC512160B2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |