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| Manufacturer Part No | K4T51163QG-HCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 32MX16 DDR2 |
| Alternate Names | K4T51163QG-HCE60 |
| K4T51163QG-HCE600 | |
| K4T51163QG-HCE600/T00 | |
| K4T51163QG-HCE6000 | |
| K4T51163QG-HCE60CV | |
| K4T51163QG-HCE60T00 | |
| K4T51163QG-HCE6: | |
| K4T51163QG-HCE6T | |
| K4T51163QG-HCE6T00 | |
| K4T51163QG-HCE6T000 | |
| K4T51163QG-HCE6TJP | |
| K4T51163QGHCE60DT |
| Package | FBGA-84 |
| Outpack | TRAY |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | 1280 |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 8th Generation |
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T51163QG-HCE6 | 158 | 0928+ | Get Quote |
| K4T51163QG-HCE6 | 2,451 | Get Quote | |
| K4T51163QG-HCE60CV | 6,500 | Get Quote | |
| K4T51163QG-HCE6T00 | 4,000 | Get Quote | |
| K4T51163QG-HCE6 | 3,456 | 09+ | Get Quote |
| K4T51163QG-HCE6 | 2,852 | 09+ | Get Quote |
| K4T51163QG-HCE6 | 110 | 09+10+ | Get Quote |
| K4T51163QG-HCE6 | 2,698 | Get Quote | |
| K4T51163QG-HCE6 | 1,356 | Get Quote | |
| K4T51163QG-HCE6 | 32 | 200931 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |