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Manufacturer Part No | K4T51163QI-HCE70D |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QI-HCE70DT |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 800 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4T51163QQ-BCF70 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51163QQ-BCF70000 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51163QQ-HCE7000 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
K4T51163QZ-ZCE7 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
PME809416BBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
PME809416CBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
PME809416DBR-E7DN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6IB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
W9751G6JB-25 DDR2 512M | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |