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Manufacturer Part No | K4T51163QI-HCE70D |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QI-HCE70DT |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 800 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
HYB18T512160BF-25F | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160BF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160CF-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TC-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TCL-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T512160TF-7.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
HYB18T5121618BF-25 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |