K4T51163QI-HIE6
Product Overview
Images are for reference only
| Manufacturer Part No | K4T51163QI-HIE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 32MX16 DDR2 |
| Alternate Names | K4T51163QI-HIE6000 |
| K4T51163QI-HIE60CV | |
| K4T51163QI-HIE6T | |
| K4T51163QI-HIE6T00 | |
| K4T51163QI-HIE6TCV |
Product Details
| Package | FBGA-84 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 10th Generation |
| Power | Normal Power |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T51163QI-HIE6 | 9,950 | Get Quote | |
| K4T51163QI-HIE6000 | 6,500 | Get Quote | |
| K4T51163QI-HIE6 | 4,000 | 11+ | Get Quote |
| K4T51163QI-HIE6 | 4,000 | Get Quote | |
| K4T51163QI-HIE6TCV | 7,947 | 10+ | Get Quote |
| K4T51163QI-HIE6TCV | 8,000 | Get Quote | |
| K4T51163QI-HIE6000 | 10 | 1022 | Get Quote |
| K4T51163QI-HIE6T00 | 10,000 | Get Quote | |
| K4T51163QI-HIE60CV | 200 | Get Quote | |
| K4T51163QI-HIE6TCV | 4,000 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| HYB18T512160BF3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160BF3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TCL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512160TFL-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512161BF-33 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T512161BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC512160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18TC512160B2F-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |