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Manufacturer Part No | K4T51163QJ-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T51163QJ-HCE6 | 9,950 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT47H32M16HR-25E:G TR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25E:G TR MIC | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25E:G TR OBS | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25E:G-IT | FBGA-84 | 1.8 V | 667 MBPS | 0 C TO +85 C |
MT47H32M16HR-25E:GBGA-84 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25E:H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25EC | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25EF | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25EG | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25EI | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |