K4T51163QN-BIE6
Product Overview
Images are for reference only
| Manufacturer Part No | K4T51163QN-BIE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 32MX16 DDR2 |
Product Details
| Package | FBGA-84 |
| Outpack | TRAY |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | -40 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | 1280 |
| Std. Carton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 14th Generation |
| Power | Normal Power |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| MT47H32M16GC-37E IT:B | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16GC-5E IT:B | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16GC-5EITB | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16GC-5EITBTR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16GC5EIT | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-25AIT:GTR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-25E AIT:G | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-25E AIT:G TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-25E AIT:H | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| MT47H32M16HR-25E IT ES:F | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |