K4T56163QGHCE6
Product Overview
Images are for reference only
| Manufacturer Part No | K4T56163QGHCE6 |
| Brand | SAMSUNG |
| Item | DDR2 SDRAM |
| Part No | 16MX16 DDR2 |
Product Details
| Package | FBGA-84 |
| Outpack | |
| RoHS | Leaded |
| Voltage | 1.8 V |
| Temperature | 0 C~+85 C |
| Speed | 667 MBPS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 8th Generation |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4T56163QGHCE6 | 5,200 | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| HYB18T256160A-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AL-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160BF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AF-33 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AFL33 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161BF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |