K4T56163QO-BCE7

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4T56163QO-BCE7
Brand SAMSUNG
Item DDR2 SDRAM
Part No 16MX16 DDR2
Alternate Names K4T56163QO-BCE7000
K4T56163QO-BCE7T
K4T56163QO-BCE7T00

Product Details

Package FBGA-84
Outpack
RoHS RoHS
Voltage 1.8 V
Temperature 0 C~+85 C
Speed 800 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Power Normal Power

Available Offers

Description Qty Datecode
K4T56163QO-BCE7 4,000 Get Quote
K4T56163QO-BCE7 2,000 1210+ Get Quote
K4T56163QO-BCE7 16,000 Get Quote
K4T56163QO-BCE7 12,000 Get Quote
K4T56163QO-BCE7 10,000 Get Quote
K4T56163QO-BCE7 10,000 Get Quote
K4T56163QO-BCE7000 300 Get Quote
K4T56163QO-BCE7T00 20,000 13+ Get Quote
K4T56163QO-BCE7T00 100,000 13+ Get Quote
K4T56163QO-BCE7T00 100,000 2013+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EM68A16CBQC-25H FBGA-84 1.7V~1.9V 800 MBPS 0 C~+85 C
HYB18T256160AC-5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF-2.5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF-28 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF-5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF-5A FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160AF50 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160BF-2.5 FBGA-84 1.8 V 800 MBPS 0 C~+85 C
HYB18T256160BF-25F FBGA-84 1.8 V 800 MBPS 0 C~+85 C