KM416V4104AS-6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No KM416V4104AS-6
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names KM416V4104AS-6 T R

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton

Available Offers

Description Qty Datecode
KM416V4104AS-6 56 DC98 Get Quote
KM416V4104AS-6 56 98 Get Quote
KM416V4104AS-6 2,500 5 Get Quote
KM416V4104AS-6 16 1997 Get Quote
KM416V4104AS-6 39,600 10+ Get Quote
KM416V4104AS-6 1,000 10+ Get Quote
KM416V4104AS-6 500 2009+ Get Quote
KM416V4104AS-6 0 Get Quote
KM416V4104AS-6 16 Get Quote
KM416V4104AS-6 5,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
GM71V65163AT-6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163BLT-60 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CLT-5/6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CLT6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CT-5/6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CT-6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CT-6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CT-60 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163CT6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C
GM71V65163TC-6 TSOP2(50) 3.3 V 60 NS 0 C~+85 C