M29W200BB-55N1

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No M29W200BB-55N1
Brand MICRON
Item FLASH-NOR
Part No 29LV200 BOTTOM

Product Details

Package TSOP-48
Outpack TRAY
RoHS Leaded
Voltage 2.7V~3.6V
Temperature 0 C~+70 C
Speed 55 NS
Std. Pack Qty
Std. Carton

SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Available Offers

Description Qty Datecode
M29W200BB-55N1 7,581 2004+ Get Quote
M29W200BB-55N1 1,000 04+ Get Quote
M29W200BB-55N1 4,032 Get Quote
M29W200BB-55N1 16,128 Get Quote
M29W200BB-55N1 285 0421 Get Quote
M29W200BB-55N1 576 Get Quote
M29W200BB-55N1 16,128 2004+ Get Quote
M29W200BB-55N1 30,000 Get Quote
M29W200BB-55N1 17,000 Get Quote
M29W200BB-55N1 5,327 2005+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
M29W200BB55N1 16 TSOP-48 2.7V~3.6V 55 NS 0 C~+70 C
M29W200BB55N1T TSOP-48 2.7V~3.6V 55 NS 0 C~+70 C