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| Manufacturer Part No | TC58NYG1S8HBAI6/2GBIT |
| Brand | KIOXIA |
| Item | FLASH-NAND |
| Part No | 256MX8 NAND SLC |
| Package | BGA-67 |
| Outpack | |
| RoHS | RoHS |
| Voltage | 1.8 V |
| Temperature | -40 C~+85 C |
| Speed | 25 NS |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Mono Stack | Single Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
| Description | Qty | Datecode | |
|---|---|---|---|
| TC58NYG1S8HBAI6/2GBIT | 1,321 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 8,481 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 8,511 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 9,681 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 8,721 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 9,741 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 9,261 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 8,671 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 8,931 | Get Quote | |
| TC58NYG1S8HBAI6/2GBIT | 9,451 | Get Quote |
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| TC58BYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6,TSB | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6JDH | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58BYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S3HBAI6YCL | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |
| TC58NYG1S8HBAI6 | BGA-67 | 1.8 V | 25 NS | -40 C~+85 C |