| K9K8G08U0B-PIB0(ON BOARD) |
SAMSUNG/三星 |
FLASH-NAND |
50
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 2.7V-3.6V / OTHER |
| K9F4G08U0A-PCB0(ON BOARD) |
SAMSUNG/三星 |
FLASH-NAND |
196
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+70 C / RoHS / 2.7V~3.6V / OTHER |
| K9F4G08U0B-KIB0(ON BOARD) |
SAMSUNG/三星 |
FLASH-NAND |
643
|
FLASH-NAND / 512MX8 NAND SLC / ULGA-52 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / OTHER |
| K9K8G08U0E-SIB0000 |
SAMSUNG/三星 |
FLASH-NAND |
1
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.5 kg 38*19*11 cm |
| M25P40-VMN6PB |
MICRON/美光 |
FLASH-SPI |
80
|
FLASH-SPI / 4MB SPI / SO-8 / 75MHZ / -40 C~+85 C / RoHS / 3.0V / TUBE / EOL / 2000 pcs 0.2 kg 55*10*2 cm |
| KLM2G1HE3FB001 |
SAMSUNG/三星 |
FLASH-EMMC |
26
|
FLASH-EMMC / 2GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / 1120 pcs |
| IS43R16160B-6BLI |
ISSI/矽成 |
DDR1 SDRAM |
5,293
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1900 pcs |
| MT46H64M32LFCM-5 IT:A |
MICRON/美光 |
LPDDR1 MOBILE |
109
|
LPDDR1 MOBILE / 64MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+85 C / RoHS / 1.8 V |
| EN25QH64-104HIP-TR |
EON/ |
FLASH-SPI |
162
|
FLASH-SPI / 64MB SPI / SOP-8 / 104MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL |
| IS42SM16160D-7TL-TR |
ISSI/矽成 |
SDRAM MOBILE |
3,000
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL |
| AT49F512-70TI |
MICROCHIP/微芯 |
FLASH-NOR |
7,784
|
FLASH-NOR / 49F512 / TSOP-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V / TRAY / EOL / 1560 pcs 1.5 kg |
| M27C256B70XF1(ROHS) |
STM/意法半导体 |
EPROM |
270
|
EPROM / 27C256 / CDIP-28 / 70 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 260 pcs |
| K9F5608R0D-JIB0000 |
SAMSUNG/三星 |
FLASH-NAND |
77,880
|
FLASH-NAND / 32MX8 NAND SLC / FBGA-63 / 50 NS / -40 C~+85 C / RoHS / 1.65V~1.95V / TRAY / EOL / 1280 pcs 2.1 kg 38*19*11 cm |
| IS45S16100C1-7TLA1 |
ISSI/矽成 |
SDRAM |
166
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS42S16800B-6TLI |
ISSI/矽成 |
SDRAM |
1,620
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS46DR32801A-5BBLA1 |
ISSI/矽成 |
DDR2 SDRAM |
7
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 400 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS46DR16160A-5BBA2 |
ISSI/矽成 |
DDR2 SDRAM |
21
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 400 MBPS / -40 C~+105 C / Leaded / 1.8 V / TRAY |
| IS43DR32800A-37CBL |
ISSI/矽成 |
DDR2 SDRAM |
30
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 533 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43DR86400B-3DBL |
ISSI/矽成 |
DDR2 SDRAM |
30
|
DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 667 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR32800A-5BBLI |
ISSI/矽成 |
DDR2 SDRAM |
31
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 400 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS42VS16100E-75TLI |
ISSI/矽成 |
SDRAM-LP |
78
|
SDRAM-LP / 1MX16 SD / TSOP2(50) / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR16640A-25BLI |
ISSI/矽成 |
DDR2 SDRAM |
90
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 400 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS43DR32801A-37CBLI |
ISSI/矽成 |
DDR2 SDRAM |
105
|
DDR2 SDRAM / 8MX32 DDR2 / WBGA-126 / 533 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS45S16402F-7TLA1 |
ISSI/矽成 |
SDRAM |
105
|
SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS41LV44002C-50CTGI |
ISSI/矽成 |
DRAM |
115
|
DRAM / 4MX4 EDO / TSOP2(24/26) / 50 NS / -40 C~+85 C / Leaded / 3.3 V / EOL |