| IS42VS16100E-75BLI |
ISSI/矽成 |
SDRAM-LP |
5,899
|
SDRAM-LP / 1MX16 SD / BGA-60 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IS43R16160B-6BL |
ISSI/矽成 |
DDR1 SDRAM |
180
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| IC43R16160E-5TL |
ISSI/矽成 |
DDR1 SDRAM |
6,376
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| IS42SM16160D-7TL |
ISSI/矽成 |
SDRAM MOBILE |
4,090
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 108 pcs |
| IS42VM16400G-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
17,083
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 3480 pcs |
| LY62W1024LL-55LLI |
LYONTEK/來揚 |
SRAM-ASYNC |
212
|
SRAM-ASYNC / 128KX8 ASYNC / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 2.7V~5.5V / TRAY / 560 pcs 1.0 kg 38*16*9 cm |
| EM638165TS-7 |
ETRON/鈺創 |
SDRAM |
20
|
SDRAM / 4MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+70 C / Leaded / 3.3 V |
| ABS2M32SD-HR |
AB-SUNSHINE |
SDRAM |
5
|
SDRAM / 2MX32 SD / TSOP2(86) / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.06 kg 36*16*9* cm |
| MT28F320J3RG-11 |
MICRON/美光 |
FLASH-NOR |
20
|
FLASH-NOR / 28F320 / TSOP-56 / 110 NS / 0 C~+85 C / Leaded / 5.0 V |
| IS43DR16320B-3DBLI |
ISSI/矽成 |
DDR2 SDRAM |
30
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs 2.0 kg 37*16*9 cm |
| GT28F160B3T120 |
INTEL/英特尔 |
FLASH-NOR |
2,000
|
FLASH-NOR / 28F160 / UBGA-48 / 120 NS / -40 C~+85 C / Leaded / 5.0 V |
| KLM4G1FEPD-B031002 |
SAMSUNG/三星 |
FLASH-EMMC |
11
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / 1280 pcs |
| K9K8G08U0E-SIB0T00 |
SAMSUNG/三星 |
FLASH-NAND |
1
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 1 MHZ / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 1000 pcs 1.0 kg 36*35*7 cm |
| K4M64163PK-BG75000 |
SAMSUNG/三星 |
SDRAM MOBILE |
1,898
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40 C~+125 C / RoHS / 1.8 V / TRAY |
| K9WAG08U1D-SCB0 |
SAMSUNG/三星 |
FLASH-NAND |
97
|
FLASH-NAND / 2GX8 NAND SLC / TSOP-48 / 1 MHZ / 0 C~+85 C / RoHS / 2.7V-3.6V / TRAY / EOL / 960 pcs |
| K9F2G08U0C-SIB0 |
SAMSUNG/三星 |
FLASH-NAND |
1
|
FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 960 pcs |
| MT41K256M8DA-125:KTR |
MICRON/美光 |
DDR3L SDRAM |
1
|
DDR3L SDRAM / 256MX8 DDR3L / FBGA-78 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs 1.21 kg 36*35*6 cm |
| TP3040J |
NATIONAL/NSC |
MONOLITHICS |
5,928
|
MONOLITHICS / TP3040 / DIP / Leaded / TUBE / 1500 pcs |
| LTL4252N-002A |
LITEON |
LEDS |
1,000
|
LEDS / LTL4252 / Leaded / TAPE ON REEL / 1000 pcs |
| HM6264BLP-10L |
HITACHI |
SRAM-ASYNC |
99
|
SRAM-ASYNC / 8KX8 ASYNC / DIP-28 / 100 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE/13 / EOL / 325 pcs 2.3 kg 52*11*8 cm |
| MX29LV400BTC-70 |
MACRONIX/MXIC/旺宏 |
FLASH-NOR |
960
|
FLASH-NOR / 29LV400 BOTTOM / TSOP-48 / 70 NS / 0 C~+70 C / Leaded / 3.3 V / TRAY / 768 pcs |
| AT45DB321B-CC |
DIALOG/ADESTO/戴樂格 |
DATA FLASH |
357
|
DATA FLASH / 45DB321 / CBGA-44 / 20 MHZ / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY / 0.7 kg 33*14*2 cm |
| K521H12ACC-B060000 |
SAMSUNG/三星 |
MCP |
560
|
MCP / 1GB NAND+512M LPDDR1 / FBGA / RoHS / 1.70-1.95V / TRAY |
| HY57V643220CT-55 |
SK HYNIX/海力士 |
SDRAM |
5
|
SDRAM / 2MX32 SD / TSOP2(86) / 183 MHZ / 0 C~+70 C / Leaded / 3.3 V / TRAY |
| AT27BV010-12VC |
MICROCHIP/微芯 |
OTPROM |
10,920
|
OTPROM / 27BV010 / VSOP-32 / 120 NS / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY |