H5TC4G83EFR-RDI

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TC4G83EFR-RDI
厂牌 SK HYNIX/海力士
IC 类别 DDR3L SDRAM
IC代码 512MX8 DDR3L

产品详情

脚位/封装 FBGA-78
外包装 TAPE ON REEL
无铅/环保 无铅/环保
电压(伏) 1.35V
温度规格 -40 C~+95 C
速度 1866 MBPS
标准包装数量 2000
标准外箱
Number Of Words 512M
Bit Organization x8
Density 4G
Operating Temperature industrial temperature(-40°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
No Of Banks 8 banks
Die Generation 6th
Product Family DRAM
Shipping Method tray

供应链有货

IC 编号 数量 生产年份
H5TC4G83EFR-RDI 100,000+ 22+ 索取报价
H5TC4G83EFR-RDI 10,000 索取报价
H5TC4G83EFR-RDI 5,000 索取报价
H5TC4G83EFR-RDI 8,640 索取报价
H5TC4G83EFR-RDI 1,600 17+ 索取报价
H5TC4G83EFR-RDI 990 索取报价
H5TC4G83EFR-RDI 500 索取报价
H5TC4G83EFR-RDI 593 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
H5TC4G83CFR-RDI FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMM0 FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMMA FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMMA000 FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMMA0CV FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMMATCT FBGA-78 1.35V 1866 MBPS -40 C~+95 C
K4B4G0846E-BMMATCV FBGA-78 1.35V 1866 MBPS -40 C~+95 C
MT41K512M8DA-107 AIT ES:P FBGA-78 1.35V 1866 MBPS -40 C~+95 C
MT41K512M8DA-107 AIT:P FBGA-78 1.35V 1866 MBPS -40 C~+95 C
MT41K512M8DA-107 AIT:P TR FBGA-78 1.35V 1866 MBPS -40 C~+95 C