H5TQ4G63EFR-RDK
产品概述
图片仅供参考
| 制造商IC编号 | H5TQ4G63EFR-RDK |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 256MX16 DDR3 |
| 共通IC编号 | H5TQ4G63EFR-RDKR |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | -40 C~+105 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Operating Temperature | Automotive Temp3) & Normal Power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| No Of Banks | 8 banks |
| Die Generation | 6th |
| Product Family | DRAM |
| Shipping Method | tray |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H5TQ4G63EFR-RDK | 1,761 | 索取报价 | |
| H5TQ4G63EFR-RDK | 8,960 | 2025+ | 索取报价 |
| H5TQ4G63EFR-RDK | 2,444 | 2148＋ | 索取报价 |
| H5TQ4G63EFR-RDK | 98 | 2313＋ | 索取报价 |
| H5TQ4G63EFR-RDK | 420 | 2316＋ | 索取报价 |
| H5TQ4G63EFR-RDK | 2,670 | 2314＋ | 索取报价 |
| H5TQ4G63EFR-RDK | 1,978 | 2315＋ | 索取报价 |
| H5TQ4G63EFR-RDK | 11,200 | 索取报价 | |
| H5TQ4G63EFR-RDK | 7,610 | 索取报价 | |
| H5TQ4G63EFR-RDK | 10,000 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TQ4G63AFR-RDCSK | FBGA-96 | 1.5 V | 1866 MBPS | -40 C~+105 C |
| IS46TR16256A-107MBLA2 | BGA-96 | 1.5 V | 1866 MBPS | -40 C~+105 C |
| IS46TR16256A-107MBLA2-TR | BGA-96 | 1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16HA-107 AAT ES:E | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16HA-107 AAT:E | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TVV-107 AAT:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TW-107 AAT ES:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TW-107 AAT:P | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TW-107 AAT:P D | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |
| MT41K256M16TW-107 AAT:P TR | FBGA-96 | 1.35 V/1.5 V | 1866 MBPS | -40 C~+105 C |