| 脚位/封装 | TSOP2(50) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 1M |
| Bit Organization | x16 |
| Density | 16M |
| Package Material | normal |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 4th Gen. |
| No Of Banks | 2 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6361651M16 | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM6361655TS-6G | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TG-6G | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6 | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6 1X16-6 | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6G | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6G ETRON | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6G NBSP | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6G PB-FREE | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM636165TS-6G,1MX16,TSOP-50 | TSOP2(50) | 3.3 V | 166 MHZ | 0 C~+70 C |