| 脚位/封装 | TSOP2(86) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 200 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Package Material | normal |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 4th Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY57V643220CLT-5I | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| HY57V653220BLTC-5I | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200L-5TI | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200L-5TLA1 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200L-5TLI | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200N-5TA1 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| IS42S32200N-5TLA1 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232E-TI50000 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232ETI-60/50 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |
| K4S643232HTI50 | TSOP2(86) | 3.3 V | 200 MHZ | -40 C~+85 C |