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| 制造商IC编号 | K4A4G165WE-BCWE |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR4 SDRAM |
| IC代码 | 256MX16 DDR4 |
| 共通IC编号 | K4A4G165WE-BCWE000 |
| K4A4G165WE-BCWE0CV | |
| K4A4G165WE-BCWE0EC | |
| K4A4G165WE-BCWET00 | |
| K4A4G165WE-BCWETCT | |
| K4A4G165WE-BCWETCV | |
| K4A4G165WE-BCWETEC |
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.2 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 3200 MBPS |
| 标准包装数量 | 1120 |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4A4G165WE-BCWE | 17,920 | 25+ | 索取报价 |
| K4A4G165WE-BCWE | 126 | 索取报价 | |
| K4A4G165WE-BCWE0CV | 19,477 | 索取报价 | |
| K4A4G165WE-BCWE0CV | 19,477 | 23+ | 索取报价 |
| K4A4G165WE-BCWE0CV | 19,502 | 索取报价 | |
| K4A4G165WE-BCWE0CV | 19,000 | 23+ | 索取报价 |
| K4A4G165WE-BCWE0CV | 10,000 | 索取报价 | |
| K4A4G165WE-BCWE0CV | 19,502 | 23+ | 索取报价 |
| K4A4G165WE-BCWETCT | 100,000+ | 22+ | 索取报价 |
| K4A4G165WE-BCWE0CV | 13,440 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT40A256M16GE 083E:B | FBGA-96 | 1.2 V | 2400 MBPS | 0 C~+70 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6OE16NWBB-62H | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16GE-062E ES:B | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16GE-062E:B | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16GE-062E:BTR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16GE-062EB | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16LY-062 | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16LY-062E | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16LY-062E IT | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16LY-062E:F | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| MT40A256M16LY-062E:FTR | FBGA-96 | 1.2 V | 3200 MBPS | 0 C~+85 C |