图片仅供参考
制造商IC编号 | K4A4G165WF-BCTDTCT |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR4 SDRAM |
IC代码 | 256MX16 DDR4 |
脚位/封装 | FBGA-96 |
外包装 | TAPE ON REEL |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.2 V |
温度规格 | 0 C~+85 C |
速度 | 2666 MBPS |
标准包装数量 | 2000 |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4Gb |
Internal Banks | 16 Banks |
Generation | 7th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4A4G165WF-BCTDTCT | 1,081 | 索取报价 | |
K4A4G165WF-BCTDTCT | 1,095 | 索取报价 | |
K4A4G165WF-BCTDTCT | 1,112 | 索取报价 | |
K4A4G165WF-BCTDTCT | 14,862 | 2022+ | 索取报价 |
K4A4G165WF-BCTDTCT | 1,033 | 索取报价 | |
K4A4G165WF-BCTDTCT | 100,000+ | 21+ 22+ | 索取报价 |
K4A4G165WF-BCTDTCT | 100,000+ | 21+ 22+ | 索取报价 |
K4A4G165WF-BCTDTCT | 18,000 | 索取报价 | |
K4A4G165WF-BCTDTCT | 0 | 21+ 22+ | 索取报价 |
K4A4G165WF-BCTDTCT | 100,000 | 21+ 22+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5AN4G6NAFR-VJC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN4G6NBJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN4G6NBJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN4G6NBJR-VKIR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN4G6NBJR-VKKR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
IS43QR16256B-075UB | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
IS43QR16256B-075UBL | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
K4A4G1646F-BCTD | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
K4A4G165WC-BCTD | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
K4A4G165WE-BCTD | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |