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| 制造商IC编号 | K4A8G085WC-BCWE |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR4 SDRAM |
| IC代码 | 1GX8 DDR4 |
| 共通IC编号 | K4A8G085WC-BCWE000 |
| K4A8G085WC-BCWE0CV | |
| K4A8G085WC-BCWE0MM | |
| K4A8G085WC-BCWE0T00 | |
| K4A8G085WC-BCWE0TCV | |
| K4A8G085WC-BCWETCT | |
| K4A8G085WC-BCWETCV |
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.2 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 2666 MBPS |
| 标准包装数量 | 1280 |
| 标准外箱 | |
| Number Of Words | 1G |
| Bit Organization | x8 |
| Density | 8Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 4th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4A8G085WC-BCWE | 30,720 | DC24+ | 索取报价 |
| K4A8G085WC-BCWE | 30,720 | 索取报价 | |
| K4A8G085WC-BCWE0MM | 0 | 索取报价 | |
| K4A8G085WC-BCWE | 20,480 | 索取报价 | |
| K4A8G085WC-BCWE | 8,960 | 2025+ | 索取报价 |
| K4A8G085WC-BCWE | 17,920 | 25+ | 索取报价 |
| K4A8G085WC-BCWE | 10,240 | 索取报价 | |
| K4A8G085WC-BCWE0MM | 0 | DC21+ | 索取报价 |
| K4A8G085WC-BCWE | 538 | 2234+ | 索取报价 |
| K4A8G085WC-BCWE | 0 | DC24+ | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT40A1G8SA-062E:E | FBGA-78 | 1.2 V | 3200 MBPS | 0 C~+85 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5AN8G8NAFR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NAFR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCIR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NCJR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NDJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN8G8NJJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| HSAN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR81024A-075VB | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |