图片仅供参考
| 制造商IC编号 | K4B1G1646I-BHMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 64MX16 DDR3L |
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35V |
| 温度规格 | -40 C~+105 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Low, i-TCSR & PASR & DS |
| Generation | 10th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B1G1646I-BHMA | 12,000 | 2107 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT41K64M16TW-107AAT:J | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IS46TR16640BL-107MBLA2 | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| IS46TR16640BL-107MBLA2-BM | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| IS46TR16640BL-107MBLA2-TR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| IS46TR16640CL-107MBLA2 | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+105 C |
| IS46TR16640CL-107MBLA2-BM | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+105 C |
| IS46TR16640CL-107MBLA2-TR | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+105 C |
| MT41K64M16TW-107 AAT | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| MT41K64M16TW-107 AAT:J TR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| MT41K64M16TW-107AATJ | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |
| MT41K64M16TW107AATJTR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+105 C |