K4B4G0846B-HCK
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G0846B-HCK |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 512MX8 DDR3 |
| 共通IC编号 | K4B4G0846B-HCK0 |
| K4B4G0846B-HCK0000 | |
| K4B4G0846B-HCK0TCV |
产品详情
| 脚位/封装 | FBGA-78 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B4G0846B-HCK0 | 113 | 11+ | 索取报价 |
| K4B4G0846B-HCK0 | 2,000 | 13+ | 索取报价 |
| K4B4G0846B-HCK0000 | 1,387 | 14+ | 索取报价 |
| K4B4G0846B-HCK0 | 1,280 | 索取报价 | |
| K4B4G0846B-HCK0000 | 1,409 | 14+ | 索取报价 |
| K4B4G0846B-HCK0 | 10,240 | 索取报价 | |
| K4B4G0846B-HCK0 | 505 | 索取报价 | |
| K4B4G0846B-HCK0 | 100 | 12 | 索取报价 |
| K4B4G0846B-HCK0 | 1,280 | 14+ | 索取报价 |
| K4B4G0846B-HCK0 | 500 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TQ4G83BFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83BFR-RDCA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83CFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G83EFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120A-107MBL | BGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MB | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBL-TR | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
| IS43TR85120AL-107MBLC | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |