图片仅供参考
制造商IC编号 | K4B4G0846B-HCK |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3 SDRAM |
IC代码 | 512MX8 DDR3 |
共通IC编号 | K4B4G0846B-HCK0 |
K4B4G0846B-HCK0000 | |
K4B4G0846B-HCK0TCV |
脚位/封装 | FBGA-78 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.5 V |
温度规格 | 0 C~+85 C |
速度 | 1866 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 3rd Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G0846B-HCK0000 | 0 | 13+ | 索取报价 |
K4B4G0846B-HCK0 | 20,000 | 索取报价 | |
K4B4G0846B-HCK0 | 15,360 | 14+ | 索取报价 |
K4B4G0846B-HCK0000 | 17,000 | 索取报价 | |
K4B4G0846B-HCK0 | 17,951 | 14+ | 索取报价 |
K4B4G0846B-HCK0000 | 17,951 | 13+ | 索取报价 |
K4B4G0846B-HCK0000 | 10,240 | 2014+ | 索取报价 |
K4B4G0846B-HCK0 | 10,000 | 索取报价 | |
K4B4G0846B-HCK0000 | 10,240 | 14+ | 索取报价 |
K4B4G0846B-HCK0 | 8,950 | 14+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5TQ4G83BFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G83BFR-RDCA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G83CFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
H5TQ4G83EFR-RDA | FBGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
IS43TR85120A-107MBL | BGA-78 | 1.5 V | 1866 MBPS | 0 C~+85 C |
IS43TR85120AL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
IS43TR85120AL-107MB | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
IS43TR85120AL-107MBL | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
IS43TR85120AL-107MBL-TR | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |
IS43TR85120AL-107MBLC | BGA-78 | 1.35V/1.5V | 1866 MBPS | 0 C~+85 C |